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Power electronics

Fewer Dislocations

We produce GaN on Silicon wafers with fewer dislocations using our patented technology, fully compatible with conventional process technology

Better Devices

Enabling very low dislocation count and thick GaN layers means higher voltages, improved device properties, and improved reliability

Improved Cost-Performance

Our technology enables high quality GaN at the cost of Si-based materials

GaN thickness scaling beyond 10µm for beyond 1200V vertical designs

Coalesced GaN on Silicon wafer

< 0,4nm roughness

Low dislocation density