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eleGaNt aims at developing a high quality planar GaN material for the power electronics markets through advanced nanowire technology addressing the shortcomings of conventional GaN platforms.

The technology drastically lowers dislocation densities that typically prevents high voltage operation and causes high leakage currents which limits energy efficiency. Further, the technology enables thick crack-free layers and thereby enables vertical architectures and thus addresses high power segments where to date only the cost inefficient SiC is used.

Grant Agreement Number: 872737

Grant Agreement Number: 101007229

Grant Agreement Number: 826392


Partner in pre-processing & electrical characterization

Swedish Center of Excellence on III-Nitrides

Partner in pre-processing and EU project YesVGaN

Partner in material characterization

Partner in electrical characterization

Investor in Hexagem