eleGaNt aims at developing a high quality planar GaN material for the power electronics markets through advanced nanowire technology addressing the shortcomings of conventional GaN platforms.

The technology drastically lowers dislocation densities that typically prevents high voltage operation and causes high leakage currents which limits energy efficiency. Further, the technology enables thick crack-free layers and thereby enables vertical architectures and thus addresses high power segments where to date only the cost inefficient SiC is used.

Grant Agreement Number: 872737