Hexagem was founded in 2015 as a spin out from Lund University and the research directed by Professor Lars Samuelson on GaN coalescence technology. Our core strength lies in III-Nitride epitaxy and advanced materials characterization.
We are developing a GaN on Silicon wafer technology which will combine low defect densities with thick GaN layers on Silicon to enable vertical device design for 1200V power electronics.
As of recently we are also developing a revolutionary relaxed InGaN technology on Silicon wafers for the µLED market, offering material for red, green, and blue emission from sub-micron pixels.
GaN Coalescence technology
InGaN Platelet technology
Book Chapter in:
Micro LEDs, Volume 106 – 1st Edition (elsevier.com)
Keynote at ”IEEE Photonics conference”, San Antonio, October 2019, ”Nanowire-mediated realization of microLEDs and photonic cavity structures”
Invited talk at “SPIE Photonic West”, San Fransisco, USA, February, 2020: “Nanowire-based materials tehnologies for realization of photonic structures and devices”
Keynote talk at “Nanoscience Global Lectures”, in Palo Alto, USA, February 2021: “Development of relaxed c-plane InGaN templates for RGB-emitting nanoLEDs”
Keynote at “STW 2021, Strategy and Technology Workshop” organized by Huawei Technologies, in Shenzhen, China, October 2021: “From nanoscale materials science to microLED display opportunities”
Keynote at “9th Huawei Multimedia Summit”, in Donguang, China, November 2021: “From nanoscale materials science to microLED display opportunities”
Opening plenary talk at “2021 International Symposium on Optoelectronics and New Energy Materials”, in Shenzhen, China, November 2021: “NanoLEDs formed on relaxed InGaN templates as an approach to realize all-nitride RGB microLEDs”
Keynote at “TCL Global Technical Cooperation Open Conference – Special Forum on New Display Technology“, Shenzhen, China, November 2021: “Self–formed sub-micron-sized nanoLEDs as building blocks for microLED displays”
Keynote at “2021 Mini/Micro-LED Industry Summit Forum”, Shenzhen, China, November 2021: “On design of nanomaterials for RGB-emitting nanoLEDs”
20) Opening Plenary talk at “2021 China International Quantum Dot Display Industry Conference”, in Putuo, Zhoushan, China, December 2021: “NanoLEDs formed on relaxed InGaN templates as an approach to realize all-nitride RGB microLEDs”