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No Lattice mismatch

We make defect-free and strain relaxed InGaN platelets on Silicon or sapphire wafers allowing easily tuneable indium composition accommodate blue to red light emission.

No Etching Defects

Our approach directly produces sub-micron platelets avoiding severe etch damage during conventional LED pixel fabrication. The crystal faces of the platelets are naturally passivated leading to substantially lower surface recombination and thus higher efficiency.

No Wafer Bow

Growing platelets on silicon wafers just requires a very thin GaN buffer of low quality, which means lower cost and extremely low wafer bow for high yield LED manufacturing.