No Lattice mismatch
We make defect-free and strain relaxed InGaN platelets on Silicon wafers enabling controlled emission throughout the visible spectrum using one material system.
No Etching Defects
Our approach directly produces sub-micron platelets avoiding severe side-wall etch damage. The crystal faces of the platelets are naturally formed during crystal growth.
No Wafer Bow
Growing platelets on silicon wafers just requires a very thin GaN buffer of low quality, which means lower cost and extremely low wafer bow enabling scalable, high yield manufacturing.
