No Dislocations

We produce GaN wafers with zero threading dislocations using our patented technology. 

Better Devices

No threading dislocations means better voltage tolerance, improved device properties, and better device reliability.

Improved Cost-Performance

Our technology enables higher quality GaN with a cost structure similar to today's commercially available GaN material.

THE TEAM


Kristian Storm

CEO

Lars Samuelson

CSO

Jonas Ohlsson

CTO

Bart Markus

Chairman

Annelie Sylvén Troedsson

Senior Legal Counsel

PARTNERS


INDUSTRIAL PARTNERS

Hexagem is working with a number of industrial partners to bring our substrate technology into high quality devices for RF applications.  We are interested to expand our current network of industrial partners with high quality partners with strong RF device expertise.

This project has received funding from the European Union's Horizon 2020 research and innovation programme under the grant agreement number 854105.